1 semiconductors summary v (br)dss =30v : r ds ( on )=0.065 ; i d =3.9a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control device marking ? 314 ZXMN3A14F issue 1 - october 2005 30v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN3A14Fta 7? 8mm 3000 units ZXMN3A14Ftc 13? 8mm 10000 units ordering information pinout s o t 2 3
ZXMN3A14F semiconductors issue 1 - october 2005 2 parameter symbol value unit junction to ambient (a) r ja 125 c/w junction to ambient (b) r ja 83 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 5 sec. (c) repetitive rating - 25mm x 25mm fr4 pcb, d=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. thermal resistance parameter symbol limit unit drain-source voltage v dss 30 v gate-source voltage v gs 20 v continuous drain current @ v gs = 10v; t a =25c (b) @v gs = 10v; t a =70c (b) @v gs = 10v; t a =25c (a) i d 3.9 3.2 3.2 a a a pulsed drain current (c) i dm 18 a continuous source current (body diode) (b) i s 2.3 a pulsed source current (body diode) (c) i sm 18 a power dissipation at t a =25c (a) linear derating factor p d 1 8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.5 12 w mw/c operating and storage temperature range t j ,t stg -55 to +150 c absolute maximum ratings
ZXMN3A14F semiconductors issue 1 - october 2005 3 characteristics
ZXMN3A14F semiconductors issue 1 - october 2005 4 parameter symbol min. typ. max. unit c onditions static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds = 30v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.048 0.069 0.065 0.095 v gs = 10v, i d =3.2a v gs =4.5v,i d =2.6a forward transconductance (1) (3) g fs 7.1 s v ds = 15v, i d =3.2a dynamic (3) input capacitance c iss 448 pf v ds = 15v, v gs =0v f=1mhz output capacitance c oss 82 pf reverse transfer capacitance c rss 49 pf switching (2) (3) turn-on-delay time t d(on) 2.4 ns v dd = 15v, v gs = 10v i d =1a r g ? 6.0 rise time t r 2.5 ns turn-off delay time t d(off) 13.1 ns fall time t f 5.3 ns total gate charge q g 8.6 nc v ds = 15v, v gs = 10v i d =3.2a gate-source charge q gs 1.4 nc gate drain charge q gd 1.8 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s = (2.5)a, v gs =0v reverse recovery time (3) t rr 13 ns t j =25c, i f = (1.6)a, di/dt=100a/ s reverse recovery charge (3) q rr 7nc electrical characteristics (at t amb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. pulse widt h 300 s; duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMN3A14F semiconductors issue 1 - october 2005 5 typical characteristics
ZXMN3A14F semiconductors issue 1 - october 2005 6 typical characteristics
ZXMN3A14F semiconductors issue 1 - october 2005 7 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 dim millimetres inches dim millimetres inches min max min max min max min max a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c 1.10 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom 10 typ 10 typ package dimensions package outline pad layout controlling dimensions are in millimetres. approximate conversions are given in inches
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